| PART |
Description |
Maker |
| 35SCGQ030 |
35A 30V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 35SCGJQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a D2-Pak package
|
International Rectifier
|
| 15CGQ100 |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
|
International Rectifier
|
| SBT350-04R |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 40V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 40V, 35A Rectifier
|
Sanyo Semicon Device
|
| 12CLQ150 |
The 12CLQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. 2CLQ150中心抽头肖特基整流器已明确，旨在满足高新技术的严格要求- REL的环境
35A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAT66-05 BAT66_05 Q62702-A988 |
From old datasheet system
Silicon Schottky Diode (Low-power Schottky rectifier diode)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAT66 BAT66-05 |
Schottky Diodes - Low power Diode in SOT22
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| KDR411S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| C35K C35A C35A_06 C35B C35D C35G C35J |
35A AUTOMOTIVE CELL DIODE
|
WTE[Won-Top Electronics]
|
