| PART |
Description |
Maker |
| 5800-123-RC 5800-102-RC 5800-152-RC 5800-121-RC 58 |
High I , Axial Choke 1 ELEMENT, 12000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
RF Choke; Series:5800; Inductance:1mH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.2A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:2.3ohm
RF Choke; Series:5800; Inductance:1.5mH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.158A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:3.45ohm
RF Choke; Series:5800; Inductance:120uH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.508A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:0.283ohm
VW-1 rated shrink tubing to cover winding
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| XQ1001-BD-000V XQ1001-BD-EV1 |
5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator VCO, 5800 MHz - 6900 MHz
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| 5800-150 5800-152 |
CHOKE RF HI CURRENT 15UH 1.28A 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
RF Choke; Series:5800; Inductance:1.5mH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.158A; Leaded Process Compatible:No; Mounting Type:Through Hole
|
Bourns, Inc.
BOURNS INC
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| HI-506A HI1-0506A-2 HI1-0506A-5 HI1-0506A-8 HI1-05 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP28
16-Channel/ 8-Channel/ Differential 8-Channel and Differential 4-Channel/ CMOS Analog MUXs with Active Overvoltage Protection
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| DMN5L06V-7 DMN5L06VA-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
| DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc.
Diodes, Inc.
|
|
