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NXPSEMICONDUCTORS-EC103D1116 - Thyristor, sensitive gate

NXPSEMICONDUCTORS-EC103D1116_7140908.PDF Datasheet


 Full text search : Thyristor, sensitive gate


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Z86C95-20AEC Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
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BD828-10 BD826-6 BD826-16 BD830-10 SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1.5AI(丙)|02
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SiBar Thyristor Surge Protectors; TVB090NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB090NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB200SA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170SC-L ( Raychem )
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SiBar Thyristor Surge Protectors; TVB120NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB190NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB180SA-L ( Raychem )
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Xiamen Hongfa Electroacoustic Co., Ltd.
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HONGFA[Hongfa Technology]
 
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