PART |
Description |
Maker |
2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
2SC3649 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
ELC06D392E ELC06D121E ELC06D562E ELC06D3R3E ELC16B |
Adoption of High -m and High Bm ferrite cores Adoption of High -m and High Bm ferrite cores
|
Panasonic Semiconductor
|
VPH03 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
2SC4479 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) VIDEO OUTPUT APPLICATIONS FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS.
|
TOSHIBA
|