| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP93PW20A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| ZAPD-900-5W |
Power Splitter/Combiner 2 Way-0 50楼? 100 to 900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 100 to 900 MHz
|
Mini-Circuits
|
| ZA2CS-10-20W |
High Power Combiner 2 Way-0 50楼? 900 to 1000 MHz
High Power Combiner 2 Way-0 50Ω 900 to 1000 MHz
|
Mini-Circuits
|
| CM900DU-24NF |
Mega Power Dual??IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual?/a> IGBTMOD 900 Amperes/1200 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| GPMP900 GPMP900-24 GPMP900-28 GPMP900-36 GPMP900-4 |
High Power Supplies 900 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| 2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
| APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
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