PART |
Description |
Maker |
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
HY1N60M |
600V / 1.0A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
SJV01N60 |
1A , 600V , RDS(ON) 10 m N-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBTs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
IXFT30N60P IXFV30N60PS |
MOSFET N-CH 600V 30A TO-268 D3 30 A, 600 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp. IXYS Corporation
|
FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|