PART |
Description |
Maker |
FRK9160R FRK9160D FN3244 FRK9160H |
40A/ -100V/ 0.085 Ohm/ Rad Hard/ P-Channel Power MOSFETs 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
ASJD1200R085SY-EX/S ASJD1200R085Y-EL |
52 A, 1200 V, 0.085 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
|
MICROSS COMPONENTS
|
MTP15N06VL MTP15N06VL_D ON2553 |
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM From old datasheet system
|
Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
APT55M85LFLL APT55M85B2FLL APT55M85B2FLLG |
59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS 7 FREDFET
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
APT50M85LVR APT50M85B2VR |
POWER MOS V 500V 56A 0.085 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
SHD218413A SHD239503 |
POWER MOSFETS 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOSFETS 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
|
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
SFF250-61 SFF250/61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
DAC08Q/883 DAC-08Q/883 DAC-08RC/883 |
PARALLEL, 8 BITS INPUT LOADING, 0.085 us SETTLING TIME, 8-BIT DAC, CDIP16 GLASS SEALED, CERDIP-16 PARALLEL, 8 BITS INPUT LOADING, 0.085 us SETTLING TIME, 8-BIT DAC, CDIP16 CERDIP-16 PARALLEL, 8 BITS INPUT LOADING, 0.085 us SETTLING TIME, 8-BIT DAC, CQCC20
|
Analog Devices, Inc. ANALOG DEVICES INC
|