| PART |
Description |
Maker |
| 2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SD1623 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB1122 |
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS
|
TY Semiconductor Co., L...
|
| 2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SC5310 |
NPN Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| 2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
| VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
| SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
