| PART |
Description |
Maker |
| 2N5583LP.MOD 2N5478.MOD 2N5478.MODR1 2N5478R1 2N54 |
0.5 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-205AF TO-39LP, 3 PIN
7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-59 TO-59, 3 PIN
5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-111
5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-111
|
Panasonic Industrial Solutions
TT electronics Semelab, Ltd.
SEMELAB LTD
|
| PG1264 PG1275 PG1280 PG1250 PG1251 PG1252 PG1253 P |
325MHz, Single/Dual, Rail-to-Rail Input and Output, Low Distortion, Low Noise Precision Op Amps; Package: SO; No of Pins: 8; Temperature Range: 0°
325MHz, Single/Dual, Rail-to-Rail Input and Output, Low Distortion, Low Noise Precision Op Amps; Package: SO; No of Pins: 8; Temperature Range: -40
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-111
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-111
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|111
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-111 晶体管|晶体管|叩| 100V的五（巴西）总裁| 5A条一（c）|11
|
ICE Components, Inc.
Square D by Schneider Electric
|
| DATASHEET ST10F168 |
ST10F168 - 16-BIT MCU - 8KB RAM - 256KB FLASH MEMORY - 111 I/O - 1 CAN 2.0B INTERFACE
|
ST Microelectronics
|
| MSC1230 |
From old datasheet system
111-Bit 2/3-Duty Controller/Driver with Digital Dimming Function
|
OKI electronic componets
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| AUIRF1404Z AUIRF1404ZL AUIRF1404ZS |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| IRKTF102-08HJ IRKTF72-06HK |
164.85 A, 800 V, SCR
Silicon Controlled Rectifier, 111.47 A, 600 V, SCR
|
Vishay Semiconductors
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| NTP75N06 NTP75N06D NTP75N06G NTB75N06 NTB75N06G NT |
Power MOSFET 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 75 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
|
