| PART |
Description |
Maker |
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STP45NF3LL_06 B11NM60FD P11NM60FD STB11NM60FD STB1 |
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK2205 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 45A条（丁）| TO - 220AB现有
|
Hitachi,Ltd.
|
| X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 |
IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
|
INTERSIL[Intersil Corporation]
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRF7458 IRF7458TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)
|
IRF[International Rectifier]
|
| IRFP3703 |
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?
|
International Rectifier
|
| FMC6G10US60 |
IGBT
Compact & Complex Module
Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| DTD743ZE DTD743ZM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743XM DTB743XE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
