| PART |
Description |
Maker |
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4245 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
|
TOSHIBA
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BAT68-03WE6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
SIEMENS A G
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 2SC5700 2SC5700WB-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| MV1660BCHIP 1N5472A MV1630 MV1630CCHIP 1N5444CCHIP |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
