PART |
Description |
Maker |
2SC3646 |
High-Voltage Switching Applications Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
Q62702-F1066 BFN25 BFN27 Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
|
TY Semiconductor Co., Ltd
|
2SD2211 |
High breakdown voltage Low collector output capacitance High transition frequency
|
TY Semiconductor Co., L...
|
2SC3973 2SC3973A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
2SC4152 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
2SC4533 |
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)
|
Panasonic Semiconductor
|
2SC3978 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic Semiconductor
|
2SC3507 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|