| PART |
Description |
Maker |
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
| HY514400A HY514400AJ HY514400ALJ HY514400ALR HY514 |
1M x 4-bit CMOS DRAM
|
ETC
|
| HY514400 HY514400J |
1M x 4-bit CMOS DRAM
|
ETC
|
| HY514400B |
1M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| NN514105A |
CMOS 4M x 1 Bit DRAM
|
NPN
|
|
