| PART |
Description |
Maker |
| MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214- |
GaN on SiC Depletion-Mode Transistor Technology Internally Matched
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000040-00500P MAGX-000040-SB2PPR |
GaN on SiC D-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
| RUP15030-1014 RUP15030-10-14 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15030-10 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15050-10-14 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| S525T S525 |
N?Channel MOS-Fieldeffect Triode, Depletion Mode
From old datasheet system
N-Channel MOS-Fieldeffect Triode, Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
