PART |
Description |
Maker |
TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V http://
|
V23814-U1306-M130 V23815-U1306-M130 V23815-U1306-M |
SPECIALTY TELECOM CIRCUIT, XFO72 1.6 Gbit/s Rx Parallel Optical Link (... 1.6 Gbit/s Tx Parallel Optical Link (... Parallel Optical Link: PAROLI T X AC, 1.6 Gbit/s 并行光链路:帕罗利德克萨斯州交流.6 Gbit / s
|
INFINEON[Infineon Technologies AG]
|
PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|