| PART |
Description |
Maker |
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCX69-10 BCX69-16 |
For general AF applications. High collector current. High current gain.
|
TY Semiconductor Co., Ltd
|
| BC618 BC617 Q62702-C1138 Q62702-C1137 |
From old datasheet system
NPN Silicon Darlington Transistors (High current gain High collector current) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SA811A |
High DC current gain. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| BCV62 |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| 2SC4332-Z |
Low collector saturation voltage. Fast switching speed. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| 2SC4705 |
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BFR183 Q62702-F1316 |
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
