| PART |
Description |
Maker |
| GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 32402 |
Flexible absorber foil WE-FAS EMI
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 32405 |
Flexible absorber foil WE-FAS EMI
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 2SA1586 |
High voltage and high current. Excellent hFE linearity. High hFE. Small package.
|
TY Semiconductor Co., Ltd
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| BCX68 BCX68-25 BCX68-10 BCX68-16 |
General Purpose Transistors - SOT89; VCEO=20V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=20 V; hFE=85...160
General Purpose Transistors - SOT89; VCEO=20V; hFE=160...375
NPN Silicon AF Transistors
|
INFINEON[Infineon Technologies AG]
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SB05-03C |
Schottky Barrier Diode 30V, 500mA Rectifier
30V 500mA Rectifier
30V/ 500mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
