PART |
Description |
Maker |
GT20J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
SG20N12DT SG20N12T |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors
|
SG75S12S |
Discrete IGBTs
|
Sirectifier Semiconductors
|
IXBF40N160 IXBF40N140 |
Discrete IGBTs High Voltage BIMOSFET
|
IXYS Corporation
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠? 600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
IXBH40N160 IXBH40N140 |
Discrete IGBTs High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
|
IXYS Corporation
|
2SH18 |
Silicon N-Channel IGBT IGBTs
|
Hitachi,Ltd. Hitachi Semiconductor
|
ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|