| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Standard Rectifier (trr more than 500ns)
N/A
SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| 2SB1430 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
|
