| PART |
Description |
Maker |
| BY13306 BY133 |
Standard silicon rectifier diodes 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-204AL
|
Semikron International
|
| EGF1T-HE3 |
DIODE 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| SBL51214X SBL51214 |
BIDI TM Transceiver Optical Module 1300/1300 nm,Low Power
From old datasheet system
|
Infineon
|
| 1417K4A 1417K4ANETLIGHT |
NetLight 1417K4A 1300 nm Laser 2.5 Gbits/s Transceiver 网络之光公司1417K4A 1300 nm激.5 Gb /秒收发器
|
Hammond Manufacturing Co., Ltd.
AGERE[Agere Systems]
|
| SI1058X-T1-E3 |
1300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET ROHS COMPLIANT, SC-89, 6 PIN
|
Vishay Intertechnology, Inc.
|
| S2T |
2 A, 1300 V, SILICON, RECTIFIER DIODE, DO-214AA
|
SEMIKRON INTERNATIONAL
|
| STL51004A STL51004G STL51004X STL51005A STL51005G |
1300 nm Laser, Low Power
From old datasheet system
1300 nm Laser in Coaxial Package with SM-Pigtail Low Power
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm激光的同轴封装与钐尾纤，低功
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| DLZ-30A DLZ-30C DLZ-13CH1 |
STANDARD CAPACITANCE TVS ARRAY 1300 W, UNIDIRECTIONAL, 15 ELEMENT, SILICON, TVS DIODE
STANDARD CAPACITANCE TVS ARRAY 1300 W, BIDIRECTIONAL, 15 ELEMENT, SILICON, TVS DIODE
|
ProTek Devices
|
| MA4EX1810M-1225T MA4EX180M-1225T MA4EX180M1-1225T |
Silicon Double Balanced HMICTM Mixer 1300 - 1900 MHz
|
M/A-COM Technology Solutions, Inc.
|
| GP10YHE3/73 GP10YHE3/54 GP10W-E3/54 GP10VHE3/73 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-204AL ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
1 A, 1500 V, SILICON, SIGNAL DIODE, DO-204AL
1 A, 1400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| SI1970DH-T1-E3 SI1970DH08 |
1300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N-Channel 30-V (D-S) MOSFET
|
Vishay Siliconix
|
|
