| PART |
Description |
Maker |
| ZL5011006 ZL50111 ZL50114GAG2 ZL50110 ZL50110GAG Z |
128, 256 and 1024 Channel CESoP Processors
|
ZARLINK[Zarlink Semiconductor Inc]
|
| ST93C57B1013TR ST93C57B1TR ST93C57B3013TR ST93C57B |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM 2K 128 x 1656 × 8 MICROWIRE的串行EEPROM
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM
|
STMicroelectronics N.V.
意法半导
MICROCHIP[Microchip Technology]
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| M14256 M14128 |
Memory Micromodules General Information for D1/ D2 and C Packaging
Memory Card IC 256/128 Kbit Serial IC Bus EEPROM
MEMORY CARD IC 256/128 KBIT SERIAL I2C BUS EEPROM
Memory Card IC 256/128 Kbit Serial I?C Bus EEPROM
Memory Card IC 256/128 Kbit Serial I2C Bus EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| X9252WV24I-2.7 X9252WV24IZ-2.7 X9252YV24IZ-2.7 X92 |
Low Power Quad 256-Tap 2-Wire Bus Up/Down Interface QUAD 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
Low Power Quad 256-Tap 2-Wire Bus Up/Down Interface QUAD 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
PANAVISE CCTV CAMERA MOUNT BASES, COLOR: BLACK, TRI-FOOT
|
Intersil, Corp.
数字电位
INTERSIL[Intersil Corporation]
|
| 29PL256N S29PL129N70GAW003 S29PL256N65GFWW03 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| CAT5259YI-00 CAT5259WI-50 |
DPP, NV, Quad 256 taps, I<sup>2</sup>C QUAD 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
DPP, NV, Quad 256 taps, I<sup>2</sup>C QUAD 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
|
ON Semiconductor
|
| CAT5251YI-50TE13 CAT5251 CAT5251JI-00TE13 CAT5251J |
Quad DPP with 256 Taps and SPI Interface
Quad Digitally Programmable Potentiometer (DPP) with 256 Taps and SPI Interface
QUAD 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24 LEAD-FREE, TSSOP-24
QUAD 50K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24 LEAD-FREE, TSSOP-24
|
CATALYST[Catalyst Semiconductor]
ON Semiconductor
|
| SLA24C01-D-3/P SLA24C02-D-3/P SLA24C02-S-3/P SLA24 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS A G
SIEMENS AG
Siemens Semiconductor Group
|
| CAT5259WI-00 CAT5259WI-50 CAT5259YI-00 CAT5259YI-5 |
Quad Digitally Programmable Potentiometers (DPP? with 256 Taps and I2C Interface
Quad Digitally Programmable Potentiometers (DPP⑩) with 256 Taps and I?C Interface
Quad Digitally Programmable Potentiometers (DPP垄芒) with 256 Taps and I漏梅C Interface
|
http://
Catalyst Semiconductor
|
| AM29LV200BB-120WAC AM29LV200BB-120WAF AM29LV200BB- |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PBGA48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）3.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
|
Advanced Micro Devices, Inc.
|
