| PART |
Description |
Maker |
| HY5S6B6 |
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
|
Hynix Semiconductor
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY5Y2B6DLF-HE HY5Y2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| T4312816B-6S |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| IS42VM16800H-6BLI IS42VM16800H-75BI IS42VM16800H-7 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS45VM32160E-6BLA1 IS45VM32160E-6BLA2 |
4M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| T436416C T436416C-6S T436416C-7S T436416C-7SG T436 |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| EMLS232TA EMLS232TAW-6 EMLS232TAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| HDD32M72B18RW-13A HDD32M72B18RW-13B HDD32M72D18RPW |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），6Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
