PART |
Description |
Maker |
BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
JANS2N3498L JANS2N3498 JANS2N3500L JANS2N3501L JAN |
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 NPN Transistor 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi, Corp. Honeywell International, Inc. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-LAWRENCE
|
FJPF13007H2TTU FJPF13007TU |
NPN Silicon Transistor 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
61084-300 61084 61084-001 61084-002 61084-101 6108 |
TV 29C 29#20 PIN PLUG 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR TV 42C 36#22D 6#8(TWINAX) SKT 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR
|
Micropac Industries, Inc. MICROPAC[Micropac Industries]
|