| PART |
Description |
Maker |
| FDB86135 |
N-Channel Shielded Gate PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
| 142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
| STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL MOSFET
N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TC4458EJD TC4457COE TC4488COE TC4489EJD TC4488EPD |
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, CDIP14
1.2 A 4 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDSO16
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, PDSO16
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, PDIP14
|
|
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| 558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ
SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR
SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR
SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
|
