PART |
Description |
Maker |
KM48C514DJ-L5 KM48C514DJ-L6 |
512K X 8 EDO DRAM, 50 ns, PDSO28 512K X 8 EDO DRAM, 60 ns, PDSO28
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Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
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http:// SIEMENS A G SIEMENS AG
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HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
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HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
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SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144 x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc. NXP Semiconductors N.V.
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AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24 x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
K4E151611D-JL50 K4E151612D-TL50 |
1M X 16 EDO DRAM, 50 ns, PDSO42 1M X 16 EDO DRAM, 50 ns, PDSO44
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