PART |
Description |
Maker |
AS7C33512NTF32_36A AS7C33512NTF32-36A.V1.3 AS7C335 |
3.3V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 3.3V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AS7C33512NTF18A AS7C33512NTF18A.V.1.1 AS7C33512NTF |
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 10 ns, PQFP100 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
AS7C33512NTD18A AS7C33512NTD18A.V.2.1 AS7C33512NTD |
3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4 ns, PQFP100 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C1356CV25-166BZXC CY7C1356CV25-166BZC CY7C1356C |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 3.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61NVF51218A-6.5TQI IS61NLF51218A-6.5B3 IS61NLF51 |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
CY7C1372D-250BGXC CY7C1372D-250BGXI CY7C1372D-250B |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
IS61NVVP51236-200BI IS61NVVP51236-250B IS61NVVP512 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 3 ns, PBGA119 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
IS61NVF102418-6.5B2 IS61NVF25672-6.5B1 IS61NVF5123 |
1M X 18 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 512K X 36 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
AS7C25512NTD36A-100TQC |
512K X 36 ZBT SRAM, 4 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|