| PART |
Description |
Maker |
| MTD1114M3B MTD1200M3B-15 |
The MTD1114M3B is a photo diode in a ceramic package. It is well suited for high reliability and high sensitivity applications.
Photo Diode
|
Marktech Corporate
|
| NR6300EZ |
?30 ?m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
30um InGaAs AVALANCHE PHOTO DIODE
|
California Eastern Labs
|
| KPS1008C |
photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC
|
KODENSHI KOREA CORP.
|
| TLP190B07 TLP190B |
Photocoupler GaA?As Ired & Photo−Diode Array
Photocoupler GaAГAs Ired & Photo−Diode Array
|
Toshiba Semiconductor
|
| MTD3010PM2 |
Photo Diode
|
Marktech Corporate
|
| S11154-201CT-15 |
Photo IC diode
|
Hamamatsu Corporation
|
| KOD-1016 |
Photo diode IC
|
Kondenshi Corp
|
| KOD-1081 |
Photo diode IC
|
KODENSHI[KODENSHI KOREA CORP.]
|
| KOD-1081 |
Photo diode IC
|
Kondenshi Corp
|
| KOD-1017 |
Photo diode IC
|
KODENSHI[KODENSHI KOREA CORP.]
|
| BPD-BQ314 BPD-GQ9F1 BPD-FQ9E1 BPD-RQ9DY-A |
PHOTO DIODE
|
American Bright Optoelectronics, Corp.
|
| BPD-RQ0AIV1 |
PIN PHOTO DIODE
|
American Bright Optoelectronics, Corp.
|
