| PART |
Description |
Maker |
| FZT1047A |
5 Amp continuous current, 20 Amp pulse current.
|
TY Semiconductor Co., Ltd
|
| FCX491A |
1 Amp continuous current
|
TY Semiconductor Co., Ltd
|
| FZT651 |
60 Volt VCEO, 3 Amp continuous current.
|
TY Semiconductor Co., Ltd
|
| KRF7805Z |
Continuous Drain Current, VGS 10V, Ta = 25 A Pulsed Drain Current IDM 120 A
|
TY Semiconductor Co., Ltd
|
| HA9P5020-5X96 |
100MHz Current Feedback Video Amplifier With Disable; Temperature Range: 0°C to 70°C; Package: 8-SOIC T&R
|
INTERSIL CORP
|
| X4283V8I X4285V8I-4.5A |
:SEMITRANS 3; Collector Current:400A; Continuous Collector Current @ 25 C:400A
CPU Supervisor with 128K EEPROM 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
|
Intersil Corporation
Intersil, Corp.
|
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| ADN2814XCPZ ADN2814 |
Continuous Rate 12.3 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp
|
AD[Analog Devices]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
