| PART |
Description |
Maker |
| DTS3031A115N4SS |
Climatiseur exterieur de 900-1200 BTUH
|
Hammond Manufacturing Ltd.
|
| CM900DUC-24NF |
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
|
Mitsubishi Electric Semicon...
|
| SKBB80C53300 SKBB40C3200_2200 SKBB250C2200 SKBB250 |
Miniature Bridge Rectifiers 微型桥式整流
Miniature Bridge Rectifiers 2.7 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Miniature Bridge Rectifiers 2.7 A, 900 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
|
SEMIKRON[Semikron International]
|
| TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93CS41D TMP93CS40D TMP93CS41 TMP93CS40 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| R9G22612 R9G23212 R9G23612 R9G20812 R9G22212 R9G20 |
Fast Recovery Rectifier (1200Amperes Average 3600 Volts)
Fast Recovery Rectifier (1200Amperes Average 3600 Volts) 快速恢复整流器（一二○○安培平600伏特
1200 A, 3000 V, SILICON, RECTIFIER DIODE
1200 A, 3200 V, SILICON, RECTIFIER DIODE
1200 A, 3400 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-1 |
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
320 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 800 V, SILICON, RECTIFIER DIODE
320 A, 400 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 800 V, SILICON, RECTIFIER DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| APT2X31DQ120J APT2X30DQ120J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| UPC1687GV-E1 UPC1687GV |
900 MHz SILICON RFIC DOWN CONVERTER
|
CEL[California Eastern Labs]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
