| PART |
Description |
Maker |
| IGC136T170S8RH2 |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| ASPI-0630LR-R47 ASPI-0630LR-R82 ASPI-0630LR-R56 AS |
High saturation current. Low loss due to low DC resistance.
|
Abracon Corporation
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| SVM860V |
Ultra low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| BF599 Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AUIRGDC0250 |
Low Switching Losses
|
International Rectifier
|
| HYG40P120H1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| AOK20B120E1 |
Low turn-off switching loss due to fast turn-off time
|
Alpha & Omega Semicondu...
|
