| PART |
Description |
Maker |
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| CSA1015 CSA1015GR CSA1015O CSA1015Y |
0.400W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.150A Ic, 70 - 140 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
|
Continental Device India Limited
Continental Device Indi...
|
| SFT2014/3 SFT2012/3 |
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| BD138 BD138-10 BD138-16 BD140 BD140-10 BD140-16 BD |
PNP power transistors
PNP power transistors 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Green; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
PNP power transistor(PNP????朵?绠?
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
|
Motorola, Inc.
ON Semi
|
| SES12VD923-2U |
140 Watts peak pulse power
|
Surge Components
|
| MP220-100-A MP220-100-B MP220-100-C MP220-100-D MP |
POWER FILM RESISTORS TO 140 WATT
|
RCD COMPONENTS INC.
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT8014JLL |
POWER MOS 7 800V 42A 0.140 Ohm
|
Advanced Power Technology
|
| MJE4342 MJE4343 MJE4353 MJE4352 |
16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
|
MOTOROLA[Motorola, Inc]
|
