| PART |
Description |
Maker |
| ELANSC520-100AC ELANSC520-100AI |
PLASTIC BGA, CAVITY UP(BGA)
|
ADVANCED MICRO DEVICES INC
|
| HYRDU64164M-80M HYRDU72184M-80M HYRDU72184M-60M |
4M X 16 RAMBUS, PBGA66 MICRO, BGA-66
4M X 18 RAMBUS, PBGA74 MICRO, BGA-74
|
Hynix Semiconductor, Inc.
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| TSC51C2XXX-12IB TSC51C2XXX-16IB TSC51C2XXX-A12IB T |
IC MAX 7000 CPLD 512 208-PQFP
IC MAX IIZ CPLD 570 LE 256-MBGA
IC MAX 7000 CPLD 512 256-FBGA
484-pin FineLine BGA RoHS Compliant: Yes
956-pin BGA RoHS Compliant: Yes
IC,FPGA,32470-CELL,CMOS,BGA,1020PIN,PLASTIC
FPGA Logic IC Logic Type:FPGA; No. of Macrocells:726; Package/Case:1020-BGA; Leaded Process Compatible:No; Number of Circuits:32;
IC,FPGA,4800-CELL,CMOS,BGA,484PIN,PLASTIC
IC,FPGA,10570-CELL,CMOS,BGA,672PIN,PLASTIC
IC,FPGA,14400-CELL,CMOS,BGA,780PIN,PLASTIC
No. of Macrocells:192; No. of Pins:68; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:192; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:160; No. of Pins:84; Operating Temp. Max:70 C; Operating Temp. Min:0 C; Propagation Delay:10ns RoHS Compliant: Yes;
No. of Macrocells:440; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:9ns RoHS Compliant: Yes;
8-BIT MICROCONTROLLER 8位微控制
IC MAX 7000 CPLD 128 100-PQFP 8位微控制
IC MAX 7000 CPLD 160 84-PLCC 8位微控制
|
TE Connectivity, Ltd.
Diodes, Inc.
Semtech, Corp.
|
| AS7C251MPFD18A-133BC AS7C251MPFD18A-133BCN |
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 BGA-165
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 LEAD FREE, BGA-165
|
Alliance Semiconductor, Corp.
|
| GDPXA255A0C400 GDPXA255A0E200 GDPXA255A0C200 GDPXA |
32-BIT, 400 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 200 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 300 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
|
Intel, Corp.
INTEL CORP
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
|
