| PART |
Description |
Maker |
| 15-29-1024 0015291024 7859-2554N |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (15渭") Gold (Au), 2 Circuits,with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (15μ) Gold (Au), 2 Circuits,with Open End
|
Molex Electronics Ltd.
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD |
160 dB Logarithmic Amplifier with Photo-Diode Interface
160 dB Range (100 pA -10 mA) Logarithmic Converter
|
AD[Analog Devices]
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| TC74AC273P07 TC74AC273P TC74AC273F |
CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
|
Toshiba Semiconductor
Toshiba, Corp.
|
| A5030A A5030U A5030Z F1251T P0080SAMC P0300ZA P030 |
solid state crowbar devices
25 V, four-port metallic line protector
65 V, four-port longitudinal two-chip protector
58 V, four-port longitudinal two-chip protector
120 V, four-port metallic line protector
90 V, four-port metallic line protector
75 V, four-port metallic line protector
58 V, ethernet/10 base T/100 Base T protector
65 V, four-port metallic line protector
275 V, two-chip microcapacitance sidactor device
100 V, LCAS asymmetrical multiport device
400 V, multiport balanced sidactor device
100 mA, battrax quad negative SLIC protector
160 mA, battrax quad negative SLIC protector
200 mA, battrax quad negative SLIC protector
400 V, balanced three-chip sidactor device
200 mA, battrax dual negative SLIC protector
58 V, multiport SLIC protector
75 V, multiport SLIC protector
100 mA, battrax dual negative SLIC protector
160 mA, battrax dual negative SLIC protector
65 V, multiport SLIC protector
95 V, multiport SLIC protector
550 V, 50 mA, high surge current sidactor device
25 V, four-port longitudinal two-chip protector
90 V, four-port longitudinal two-chip protector
120 V, four-port longitudinal two-chip protector
190 V, four-port longitudinal two-chip protector
275 V, four-port longitudinal two-chip protector
|
Teccor Electronics
|
| DF3A6.8FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3F |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
