| PART |
Description |
Maker |
| RJK4012DPE-12 RJK4012DPE-15 RJK4012DPE-00J3 |
400V - 15A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| APT30M90AVR |
POWER MOS V 300V 33A 0.090 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT30M70BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 48A 0.070 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| CMA-5.08-HF |
Standard : UL - IEC 300V - 320V 15A - 20A
|
Eldeco Srl
|
| MDL-5-VF |
Standard : UL - IEC 300V - 320V 15A - 10A
|
Eldeco Srl
|
| CMA-5.08-H |
Standard : UL - IEC 300V - 320V 15A - 20A
|
Eldeco Srl
|
