| PART |
Description |
Maker |
| MA45334 |
SILICON ABRUPT TUNING VARACTOR DIODE S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
Advanced Semiconductor, Inc.
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| 1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| AT12015-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| ASIS3028 S3028 ADVANCEDSEMICONDUCTORINC.-ASIS3028 |
SILICON ABRUPT VARACTOR DIODE
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 1N5689A |
33 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| DH71012 DH72150 DH72100 DH72270 DH72006 DH72025 |
KU BAND, 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 15 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 10 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.6 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 2.5 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| AT9017-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR
Diode
|
Advanced Semiconductor
ASI
|
| EH74470 |
L BAND, 47 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| MA45851 |
SILICON ABRUPT TUNING VARACTOR DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
|
| GVD91302-011 |
VHF-C BAND, 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SPRAGUE-GOODMAN ELECTRONICS INC
|
| 1N5692AB 1N5688AB |
VHF-UHF BAND, 56 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
VHF-UHF BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
|
