| PART |
Description |
Maker |
| SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
| SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| AM2300N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| AM2308NE |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| MMBF2201NT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM3850C |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| G3VM-21ER G3VM-21BR |
Higher Power, 4A switching with a 20V load, DIP package. Low 20 mΩ ON Resistance.
|
Omron Electronics LLC
|
