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FDG311N - High performance trench technology for extremely low RDS(ON).

FDG311N_7549721.PDF Datasheet

 
Part No. FDG311N
Description High performance trench technology for extremely low RDS(ON).

File Size 144.26K  /  2 Page  

Maker

TY Semiconductor Co., Ltd



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: FDG313N
Maker: FAI
Pack: SOT26
Stock: Reserved
Unit price for :
    50: $0.16
  100: $0.16
1000: $0.15

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 Full text search : High performance trench technology for extremely low RDS(ON).
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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