| PART |
Description |
Maker |
| IRF6603 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
HEXFETPower MOSFET
|
IRF[International Rectifier]
|
| IRF540PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB3006PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFH6200PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7328PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IR710PBF INTERNATIONALRECTIFIER-IR710PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
|
| IRFZ44ESPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRFZ44ZLPBF |
HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 55V的，的RDS（on）\u003d十三点九米ヘ，身份证\u003d 51A条）
|
International Rectifier, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 500V, 24A, 0.19ヘ
N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
