| PART |
Description |
Maker |
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| ADA4077-2-ARMZ ADA4077-2BRZ-R7 ADA4077-2BRZ-RL ADA |
The ADA4077-2 is a dual amplifier featuring extremely low offset voltage and drift and low input bias current, noise, and power consumption.
|
Analog Devices
|
| STP16N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| GFC264 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| PMV65XP |
P-channel TrenchMOS(tm) extremely low level FET
P-channel TrenchMOS extremely low level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
