| PART |
Description |
Maker |
| LLS2G101MELZ LLS1C563MELC LLS1C473MELC LLS1C473MEL |
Withstanding 3000 hours application of rated ripple current at 85°C.
|
Nichicon corporation
|
| B82500-C-A10 B82500-C-A2 B82500-C-A8 B82500-C-A5 |
VHF chokes with ferrite core Rated voltage 250 V dc/ac Rated current 0,2 to 2 A Rated inductance 120 to 3900 mH
|
EPCOS AG
|
| C62122-A132-B95 B84115-E-A110 B84115-E-A30 B84115- |
SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A
|
EPCOS AG
EPCOS[EPCOS]
|
| B82412-A3100-M B82412-A1102- B82412-A1103- B82412- |
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 10 mH Rated current 90 to 700 mA
|
EPCOS[EPCOS]
|
| B821411102K000 B821411103K000 B821411104J000 B8214 |
SBC choke (Small Bobbin Core) Rated current 55 to 725 mA Rated inductance 1 to 1000
|
EPCOS[EPCOS]
|
| B82422-A1102-100 B82422-A1103-100 B82422-A1104-100 |
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,0082 to 100 uH Rated current 65 to 800 mA
|
EPCOS AG
EPCOS[EPCOS]
|
| IRFV460 IRFV460-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE RATED AND dv/dt RATED
500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| HMC612LP4 HMC612LP4E |
75 dB LOGARITHMIC DETECTOR / CONTROLLER, 50 Hz - 3000 MHz
50 MHz - 3000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 10 dBm INPUT POWER-MAX
|
http://
Hittite Microwave Corporation
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
