| PART |
Description |
Maker |
| HUF75925D3ST HUF75925P3 HUF75831SK8 |
3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
11A, 200V, 0.275 Ohm, N-Channel, UltraFETPower MOSFETs
11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
11A 200V 0.275 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| RFSP5032RS32Q1 RFSP5032RS32P0 |
5 GHz 802.11a WLAN Power Amplifier 5频段802.11a WLAN功率放大
|
ANADIGICS, Inc.
|
| STP12NM50N STD12NM50N STF12NM50N STB12NM50N |
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| STP11NM60 |
N-CHANNEL 600V - 0.4Ohm - 11A TO-220 Mdmesh Power MOSFET
|
SGS Thomson Microelectronics
|
| STB11NM60T4 |
N-Channel 600V - 0.4Ohm - 11A TO-220 MDmesh™ POWER MOSFET
|
ST Microelectronics
|
| ITF86182SK8T |
11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRF9240 IRF9240-15 |
Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
| APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 11A 1.000 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| STW12NK90Z |
N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| STS11NF30L |
N-CHANNEL 30V - 0.009 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
