| PART |
Description |
Maker |
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AN-9037 |
8x8 MLP DriverMOS Packaging
|
http://
|
| 5962-0420501HYC 5962-0420501HPA 5962-0420501HXA 59 |
0.5 Amp Output Current IGBT Gate Drive Optocoupler 0.5安培输出电流IGBT栅极驱动光电耦合
5962-0420501HYC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HXA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HYA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-300 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
|
IRF[International Rectifier]
|
| STS11NF30L STS11NF30L07 |
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET II Power MOSFET
N-channel 30V - 0.0085ヘ - 11A SO-8 Low gate charge STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MCTG35P60F1 |
35A / 600V P-Type MOS Controlled Thyristor (MCT)
35A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| MCTV75P60E1 MCTA75P60E1 |
75A / 600V P-Type MOS Controlled Thyristor (MCT)
75A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| C3757-02 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Photonics
|
