| PART |
Description |
Maker |
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KSC3073 |
Power Amplifier Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ20109 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK152909 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC5344SF |
Audio power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SB90607 2SB906 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC4604 2SC460404 |
Power Amplifier Application Power Switching Applications.
|
Toshiba Semiconductor
|
| 2SC5344 |
NPN Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| 2SA1981 |
PNP Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| 2SK153006 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
Toshiba Semiconductor
|
| 2SK2013 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
http://
Toshiba Semiconductor
|
