| PART |
Description |
Maker |
| M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8，大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| FM1608B-SGTR |
64-Kbit (8 K 8) Bytewide F-RAM Memory
|
Cypress
|
| FM28V100 FM28V100-TG FM28V100-TGTR |
1Mbit Bytewide F-RAM Memory
|
Ramtron International Corporation
|
| FM28V100-13 |
1Mbit Bytewide F-RAM Memory
|
Cypress Semiconductor
|
| FM28V020 FM28V020-SG FM28V020-SGTR FM28V020-TGTR F |
256Kbit Bytewide F-RAM Memory
|
Ramtron International Corporation
|
| FM28V020 FM28V020-SGTR FM28V02011 FM28V020-TG FM28 |
256Kbit Bytewide F-RAM Memory
|
http://
|
| FM380806 |
256Kb Bytewide FRAM w/ Real-Time Clock
|
Ramtron International Corporation
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| FM18L08 |
256Kb Bytewide FRAM Memory(256Kb宽字节FRAM存储
From old datasheet system
|
Ramtron International Corp.
|
| BUT33 |
RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 20 Watts
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
