| PART |
Description |
Maker |
| IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
| IRF7501PBF IRF7501TRPBF IRF7501PBF-15 |
Generation V Technology Ulrtra Low On-Resistance
|
International Rectifier
|
| IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
