PART |
Description |
Maker |
LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components Sharp Corporation
|
IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX25L3208EZNI12G MX25L3208EM2I12G |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX25L3205A |
32M-BIT [x 1] CMOS SERIAL eLiteFlash MEMORY
|
Macronix International
|
KM23C32000CG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
KM23C32000BETY KM23C32000BTY |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX25U3235FZNI10G MX25U3235FM2I10G |
1.8V 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX29L3211 MX29L3211TC-10 MX29L3211MC-10 |
32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
|
MCNIX[Macronix International]
|