| PART |
Description |
Maker |
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| STUB527 STUB59B STUB010 STUB011 STUB012 STUB013 ST |
Working peak reverse voltage: 58.1 V, 1 mA, 400 W surface mount transient voltage suppressor
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor
Working peak reverse voltage: 64.1 V, 1 mA, 400 W surface mount transient voltage suppressor
|
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| P6KE200C P6KE9.1 P6KE9.1C P6KE47C P6KE51C P6KE30 P |
600W TRANSIENT VOLTAGE SUPPRESSORS
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 电可擦除可编程逻辑器件
600W TRANSIENT VOLTAGE SUPPRESSORS 600W瞬态电压抑制器
Single Output LDO, 200mA, Fixed(2.5V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State)
Reverse stand-off voltage: 171.00V, 600W transient voltage suppressor
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Panjit International Inc
Microsemi
|
| NSD03A20 |
Low Forward Voltage Drop Diode
Device = Diode ;; Ripetitive Peak Reverse Voltage(V) = 200
|
NIEC[Nihon Inter Electronics Corporation]
|
| U1GC44 |
Average Forward Current Repetitive Peak Reverse Voltage Mini Plastic Mold Package
|
Toshiba Semiconductor
|
| NTE5319 |
Single phase bridge rectifier, 4A. Maximum recurrent peak reverse voltage, Prv = 600V.
|
NTE Electronics
|
| FTD182 |
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DIODE TRIO DELCO TYPE Repetitive Peak Reverse Voltage VRRM 200
|
FCI connector
First Components International
|
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
| BYS459B-1500S BYS459-1500S BYS459F-1500S BYS459-15 |
10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC PLASTIC PACKAGE-2
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns
|
Vishay Beyschlag
VISAY[Vishay Siliconix]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| D2650N |
Periodische Spitzensperrspannung repetitive peak reverse voltages
|
Infineon Technologies A...
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