PART |
Description |
Maker |
2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SD1623 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
2SC4390 |
Adoption of MBIT process. High DC current gain (hFE=800 to 3200).
|
TY Semiconductor Co., Ltd
|
2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
WSL3637L5000FEA WSL3637L5000FEK WSL3637L5000JEA WS |
LED Indicator; LED Color:Red; Forward Current:20mA; Forward Voltage:28V; Color:Red; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No Power Metal Strip shunts, very low R-val
very low R-value, very low TCR;
low thermal EMF LED Indicator; Color:Green; Luminous Intensity (MSCP):1000foot lambert; Voltage Rating:24V; LED Color:Green; Leaded Process Compatible:No; Lens Style:(H x Dia) 35.6 x 19.80 mm; Lens Width:17.8; Mounting Type:Through Hole Power Metal Strip Resistors, Low Value, Surface Mount
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
XCV800 XC4VFX60 XC2VP100 XC3S400 XC2S50 XC2VP50 XC |
Platform Flash In-System Programmable Configuration PROMS Low-Power Advanced CMOS NOR FLASH Process Low-Power Advanced CMOS NOR FLASH Process
|
http:// Xilinx, Inc
|
IRF7805QPBF08 |
Advanced Process TechnologyUltra Low On-Resistance
|
International Rectifier
|
SPJB15 |
Low Profile Process Sealed Tactiles
|
Nihon Kaiheiki Industry Co. Ltd.
|
AUIRF7207QTR |
Advanced Process Technology Low On-Resistance
|
International Rectifier
|
AUIRFR1018ETRL AUIRFR1018ETRR |
Advanced Process Technology Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
B15HLPC-B JB15HLPC-BB JB15HLPC-BC JB15HLPC-BE JB15 |
Illuminated Low Profile Process Sealed Tactiles
|
Nihon Kaiheiki Industry Co. Ltd. Nihon Kaiheiki Industry...
|