| PART |
Description |
Maker |
| CM50DY-28H |
Dual IGBTMOD 50 Amperes/1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DY-28H |
Dual IGBTMOD 100 Amperes/1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DY-28H |
Dual IGBTMOD 150 Amperes/1400 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| CM600HA-28H |
Single IGBTMOD 600 Amperes/1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM1000E3U-34NF |
Mega Power Chopper IGBTMOD 1000 Amperes/1700 Volts
|
Powerex Power Semicondu...
|
| ID2260A2 |
DUAL IGBTMOD-TM POWER MODULE
|
Powerex Power Semiconductors
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| IRHNB7Z60 IRHNB8Z60 |
30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
|
International Rectifier
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| CM200DU-24H |
Dual IGBTMOD 200 Amperes/1200 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-12H |
Dual IGBTMOD 100 Amperes/600 Volts
Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
