| PART |
Description |
Maker |
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3649 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SA1593S-TL-E 2SA1593T-E 2SA1593T-TL-E 2SA1593S-E |
Bipolar Transistor Adoption of FBET, MBIT processes
|
ON Semiconductor
|
| 2SC4738 |
High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700
|
TY Semiconductor Co., L...
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| KIT5003A |
high prefomance transmissive type photo interrupter, combines high-output GaAs IRED with high sensitive phototransistor.
|
KODENSHI KOREA CORP.
|
